Polycrystalline silicon for integrated circuit applications by Ted Kamins fills a significant gap and provides an important text for semiconductor process engineers in the manufacturing, development, or research areas. Polycrystalline silicon is one of the key elements in both silicon MOS (CMOS) and bipolar technologies, and hundreds of individual journal papers have been written describing its preparation, properties, and applications. This text, written by one of the key pioneers in the use of polycrystalline silicon technology, compiles the existing knowledge base and presents it in a coherent fashion.

The material in this volume is self-contained so that it is useful for reference, review, or self-directed study by practicing engineers or scientists. It can also serve as a supplemental reference or as a text for a course in advanced integrated circuit processing.

The book is divided into six chapters, covering “Deposition,” “Structure,” “Dopant Diffusion and Segregation,” “Oxidation,” “Electrical Properties,” and “Applications.” Each chapter typically covers a broad range of related topics. The monograph provides a good description of the chemistry and fluid dynamics of polysilicon deposition, materials analysis techniques, and electrical characterization. The subject matter is treated comprehensively without overwhelming the reader. Within the space of 300 easily readable pages, almost all topics relevant to polycrystalline silicon technology are covered. While some readers might wish for a more in-depth coverage of certain topics, the author has successfully addressed the needs of the average engineer. An extensive and up-to-date bibliography is provided for each chapter for those readers desiring more thorough coverage, and the book is well indexed.

The chapter on applications will be of special interest to the semiconductor device engineer. Here the use of polycrystalline silicon for gate electrodes, wiring, bipolar contacts, floating gate memories, resistors, fusible links, diffusion sources, isolation, capacitors, diodes, transistors, sensors, and gettering layers is described. In each application, the function of the poly-Si and its relevant properties are discussed.

The book is well written and concise. The text follows a logical, tutorial sequence, and the equations are straightforward for the reader to follow. Polycrystalline silicon for integrated circuit applications should be seriously considered for rounding out the library of a practicing engineer.